HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

PEARTON, SJ ^{[1
]}

MALM, DL ^{[1
]}

HEIMBROOK, LA ^{[1
]}

KOVALCHICK, J ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

VERNON, SM ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：682 / 684

页数：3

共 16 条

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[10] HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

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