THE REFLECTANCE OF SOLID-PHASE EPITAXIAL PD/GE FILM ON GAAS AND ITS APPLICATION FOR VCSELS ARRAY

被引：6

作者：

CHEN, WX ^{[1
]}

JIAO, PF ^{[1
]}

ZHAO, JH ^{[1
]}

WANG, SM ^{[1
]}

GUAN, SC ^{[1
]}

CHEN, QX ^{[1
]}

机构：

[1] TAIYUAN NORMAL SCH,DEPT PHYS,TAIYUAN 030001,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 88卷 / 06期

关键词：

D O I：

10.1016/0038-1098(93)90614-S

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Solid-Phase Epitaxial Pd/Ge Ohmic contact to GaAs has a low specific contact resistivity (5x10(-7) cm(-2) on 10(18) cm(-3) n-GaAs). The cross-sectional TEM photomicrograph shows the interface between the contact and the GaAs is planar and abrupt to within atomic dimensions. The reflectance of Pd/Ge films on GaAs was measured for the first time. The films were employed as both mirrors and electrodes for Vertical Cavity Surface-emitting Lasers (VCSELs) array.

引用

页码：461 / 463

页数：3

共 4 条

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