CHARACTERIZATION OF SILICIDED SHALLOW N+P JUNCTIONS FORMED BY P+ IMPLANTATION INTO THIN TI FILMS ON SI SUBSTRATES

被引：4

作者：

JUANG, MH ^{[1
]}

CHENG, HC ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV, INST ELECTR, HSINCHU, TAIWAN

来源：

SOLID-STATE ELECTRONICS | 1992年 / 35卷 / 10期

关键词：

D O I：

10.1016/0038-1101(92)90095-T

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-quality silicided shallow n+p junctions have been fabricated by P+ implantation into thin Ti films on Si substrates and by moderate implant conditions as well as subsequent high-temperature rapid thermal annealing (RTA) followed by low-temperature conventional furnace annealing (CFA). RTA minimizes the diffusion of knock-on Ti but greatly reduces the drive-in efficiency because of its short annealing time. Driving the dopants out of silicides via long-time annealing was associated with the crystallinity of silicides. The junctions formed by this scheme with respect to various implant and anneal conditions have been characterized. In addition, the distribution profile of Ti penetration was correlated with the effective generation life time obtained from the reverse I-V curves.

引用

页码：1535 / 1542

页数：8

共 19 条

[1] GENERALIZED GUIDE FOR MOSFET MINIATURIZATION [J].