DEEP-LEVEL TRANSIENT SPECTROSCOPY DETECTION OF DEFECTS CREATED IN EPITAXIAL GAAS AFTER ELECTRON-BEAM METALLIZATION

被引：21

作者：

NEL, M

AURET, FD

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.341676

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2422 / 2425

页数：4

共 18 条

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[10] INTERPRETATION OF DEEP-LEVEL OPTICAL SPECTROSCOPY AND DEEP-LEVEL TRANSIENT SPECTROSCOPY DATA - APPLICATION TO IRRADIATION DEFECTS IN GAAS [J].

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