HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES

被引：0
作者：
LU, XJ
RHODES, D
PERLMAN, BS
机构：
[1] U.S. Army Research Laboratory, Fort Monmouth
来源：
JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.355292
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.
引用
收藏
页码：2908 / 2913
页数：6
相关论文
共 50 条
  • [31] EFFECT OF SPACER LAYERS ON CAPACITANCE OF RESONANT-TUNNELING DIODES
    WEI, T
    STAPLETON, S
    JOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1287 - 1290
  • [32] Carbon nanotube resonant-tunneling diodes as terahertz oscillators
    Dragoman, M
    Dragoman, D
    2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2003, : 75 - 78
  • [33] OPTIMIZED RESONANT-TUNNELING LIGHT-EMITTING-DIODES
    KINDLIHAGEN, A
    WILLANDER, M
    CHAO, KA
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1391 - 1393
  • [34] THz resonant-tunneling diodes, oscillators, detectors, and applications
    Feiginov, Michael
    TERAHERTZ PHOTONICS II, 2022, 12134
  • [35] EXTRINSIC TRISTABILITY AS THE CAUSE OF BISTABILITY IN RESONANT-TUNNELING DIODES
    JOGAI, B
    SUPERLATTICES AND MICROSTRUCTURES, 1992, 11 (04) : 383 - 385
  • [36] Comparison of bistable circuits based on resonant-tunneling diodes
    González, AF
    Mazumder, P
    16TH INTERNATIONAL CONFERENCE ON VLSI DESIGN, PROCEEDINGS, 2003, : 493 - 498
  • [37] Graphene-hexagonal boron nitride resonant tunneling diodes as high-frequency oscillators
    Gaskell, J.
    Eaves, L.
    Novoselov, K. S.
    Mishchenko, A.
    Geim, A. K.
    Fromhold, T. M.
    Greenaway, M. T.
    APPLIED PHYSICS LETTERS, 2015, 107 (10)
  • [38] Theory of digital magnetoresistance in ferromagnetic resonant-tunneling diodes
    Ertler, Christian
    Fabian, Jaroslav
    PHYSICAL REVIEW B, 2007, 75 (19)
  • [39] HIGH-FREQUENCY PROPERTIES OF RESONANT TUNNELING DIODE
    SHENG, HY
    SINKKONEN, J
    SUPERLATTICES AND MICROSTRUCTURES, 1991, 9 (04) : 537 - 542
  • [40] HIGH-FREQUENCY PROPERTIES OF RESONANT TUNNELING DEVICES
    KISLOV, V
    KAMENEV, A
    APPLIED PHYSICS LETTERS, 1991, 59 (12) : 1500 - 1502
12345