HIGH-FREQUENCY CAPACITIVE EFFECTS IN RESONANT-TUNNELING DIODES

被引：0

作者：

LU, XJ

RHODES, D

PERLMAN, BS

机构：

[1] U.S. Army Research Laboratory, Fort Monmouth

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.355292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time-varying charge buildup in the quantum well region of a resonant tunneling diode (RTD) and related capacitive effects are calculated using the scattering matrix method developed. The small signal analysis of admittance shows a prominent influence from the capacitive effect, due to the dynamic shifting of the resonant energy levels. The model developed is helpful for understanding the RTD's high-frequency behavior and device applications.

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页码：2908 / 2913

页数：6

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