UNDOPED AND SB-DOPED ZNSE-BASED II-VI SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY

被引：6

作者：

SHEN, AD ^{[1
]}

XU, L ^{[1
]}

WANG, HL ^{[1
]}

CHEN, YL ^{[1
]}

WANG, ZJ ^{[1
]}

LI, AZ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,SHANGHAI INST MET,SHANGHAI 200050,PEOPLES R CHINA

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90644-C

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

High-resistivity and p-type ZnSe-based II-VI semiconductor superlattices were prepared by molecular beam epitaxy on (100) GaAs or (100) InP substrates. The modulation-doped ZnSe-ZnTe superlattice by using antimony as a dopant has a hole concentration of 5 x 10(14) cm-3 . The absorption spectra of undoped ZnSe-ZnS superlattices were measured at temperatures ranging from 16 K to room temperature and three absorption peaks corresponding to 1E-1HH, 1E-1LH and 1E-3HH transitions were observed for the first time. Two absorption peaks corresponding to the transitions of the first heavy-hole and light-hole to the conduction band were also observed in the room temperature absorption spectra of ZnSe-ZnTe superlattices.

引用

页码：383 / 386

页数：4

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