DC MOSFET DOPANT PROFILE METHOD

被引:13
作者
BUEHLER, MG
机构
关键词
D O I
10.1149/1.2129736
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
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页码:701 / 704
页数:4
相关论文
共 9 条
[1]   DOPANT PROFILES DETERMINED FROM ENHANCEMENT-MODE MOSFET DC MEASUREMENTS [J].
BUEHLER, MG .
APPLIED PHYSICS LETTERS, 1977, 31 (12) :848-850
[2]  
BUEHLER MG, 1976, NBS SPEC PUBL, V400, P22
[3]  
Grove A S, 1967, PHYS TECHNOLOGY SEMI
[4]   LIMITATION OF PULSED CAPACITANCE TECHNIQUE OF MEASURING IMPURITY PROFILES [J].
LEBLANC, AR ;
KLEPPINGER, DD ;
WALSH, JP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (08) :1068-+
[6]  
SZE SM, 1969, PHYSICS SEMICONDUCTO
[7]   DOUBLE BORON IMPLANT SHORT-CHANNEL MOSFET [J].
WANG, PP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :196-204
[8]  
YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2
[9]  
ZEIGLER K, 1975, SOLID STATE ELECTRON, V18, P189