GAP-STATES AND THEIR CAPTURE-CROSS-SECTION DISTRIBUTION IN A-SI-H STUDIED BY FREQUENCY-RESOLVED PHOTOCURRENT SPECTROSCOPY

被引：31

作者：

HATTORI, K

NIWANO, Y

OKAMOTO, H

HAMAKAWA, Y

机构：

[1] Faculty of Engineering Science, Osaka University, Toyonaka, Osaka

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80131-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the application of frequency-resolved photocurrent spectroscopy to undoped and P-doped a-Si:H specimens. The frequency-domain experiments detect the midgap states originating from doubly-occupied dangling bonds (D-) distributed around 0.5eV below the conduction band edge, as well as yield the estimates of electron capture cross-sections at 9 x 10(-15) cm2 for D+ and at 5 x 10(-15) cm2 for D0. Potential fluctuations due to random charged-center distribution are also inferred from the cross-section data for doped sample.

引用

页码：363 / 366

页数：4

共 7 条

[1] ABE K, PHILOS MAG B, V58
[2] BRUGGEMANN R, 1990, PHILOS MAG B, V62, P29
[3] GAP STATES DISTRIBUTION OF UNDOPED A-SI-H DETERMINED WITH PHASE-SHIFT ANALYSIS OF THE MODULATED PHOTOCURRENT
OHEDA, H
YAMASAKI, S
YOSHIDA, T
MATSUDA, A
OKUSHI, H
TANAKA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (07): : L440 - L442
[4] DISTRIBUTION OF RECOMBINATION COEFFICIENTS OF HOLE TRAPS IN PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
OHEDA, H
[J]. JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) : 3803 - 3808
[5] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
OVERHOF, H
BEYER, W
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 377 - 392
[6] SHUMM G, 1989, J NONCRYST SOLIDS, V114, P660
[7] RECOMBINATION IN A-SI-H - TRANSITIONS THROUGH DEFECT STATES
STREET, RA
BIEGELSEN, DK
WEISFIELD, RL
[J]. PHYSICAL REVIEW B, 1984, 30 (10): : 5861 - 5870

← 1 →