HIGH-EFFICIENCY ALGAAS/INGAAS HETEROSTRUCTURE FET OSCILLATORS AT V-BAND

被引：0
作者：
TSERNG, HQ
SAUNIER, P
机构：
[1] Texas Instruments Incorporated Central Research Laboratories, Dallas, Texas 75265, PO Box 655936
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 24期
关键词：
Field-effect transistors; Oscillators; Transistors;
D O I：
10.1049/el:19901320
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Quarter micron gate length heterostructure FETs used as oscillators have achieved record DC to RF conversion efficiencies at V-band. Devices with gatewidths of 50 ion achieved an efficiency as high as 27% with output powers up to 20 mW in the 54 to 66 GHz frequency range. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：2048 / 2049
页数：2
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