COULOMBIC AND NEUTRAL ELECTRON TRAPPING CENTERS IN SIO2

被引:8
作者
BUCHANAN, DA [1 ]
FISCHETTI, MV [1 ]
DIMARIA, DJ [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0169-4332(89)90459-5
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:420 / 428
页数:9
相关论文
共 7 条
[1]   ELECTRON TRAPPING AND DETRAPPING CHARACTERISTICS OF ARSENIC-IMPLANTED SIO2 LAYERS [J].
DEKEERSMAECKER, RF ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1085-1101
[2]   HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE [J].
DEKEERSMAECKER, RF ;
DIMARIA, DJ .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :532-539
[3]  
DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[4]   HOT-ELECTRONS IN SILICON DIOXIDE - BALLISTIC TO STEADY-STATE TRANSPORT [J].
DIMARIA, DJ ;
FISCHETTI, MV .
APPLIED SURFACE SCIENCE, 1987, 30 (1-4) :278-297
[5]   THEORY OF HIGH-FIELD ELECTRON-TRANSPORT IN SILICON DIOXIDE [J].
FISCHETTI, MV ;
DIMARIA, DJ ;
BRORSON, SD ;
THEIS, TN ;
KIRTLEY, JR .
PHYSICAL REVIEW B, 1985, 31 (12) :8124-8142
[6]  
LAX M, 1960, PHYS REV, V119, P66
[7]   HIGH-FIELD CAPTURE OF ELECTRONS BY COULOMB-ATTRACTIVE CENTERS IN SILICON DIOXIDE [J].
NING, TH .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (07) :3203-3208