BORON-ION-IMPLANTATION AND FLUORINE-ION-IMPLANTATION INTO ZNSE SINGLE-CRYSTALS

被引:9
作者
ADACHI, S [1 ]
MACHI, Y [1 ]
机构
[1] TOKYO ELECT ENGN COLL,FAC ENGN,DEPT ELECTR,CHIYODA KU,TOKYO 101,JAPAN
关键词
D O I
10.1143/JJAP.17.135
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:135 / 139
页数:5
相关论文
共 22 条
[1]   ANNEALING EFFECT ON COPPER IMPURITY EMISSION IN ZNSE [J].
ADACHI, S ;
MACHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1975, 14 (12) :2087-2088
[2]  
ADACHI S, 1976, JPN J APPL PHYS, V15, P1513, DOI 10.1143/JJAP.15.1513
[3]   PHOSPHOROUS-ION-IMPLANTED CDS [J].
ANDERSON, WW ;
MITCHELL, JT .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :334-&
[4]   CARRIER MOBILITY AND SHALLOW IMPURITY STATES IN ZNSE AND ZNTE [J].
AVEN, M ;
SEGALL, B .
PHYSICAL REVIEW, 1963, 130 (01) :81-+
[5]   PHOTOCONDUCTIVITY OF ZINC SELENIDE CRYSTALS AND A CORRELATION OF DONOR AND ACCEPTOR LEVELS IN II-VI-PHOTOCONDUCTORS [J].
BUBE, RH ;
LIND, EL .
PHYSICAL REVIEW, 1958, 110 (05) :1040-1049
[6]  
Chatterjee P. K., 1973, Journal of Luminescence, V8, P176, DOI 10.1016/0022-2313(73)90103-8
[7]   HIGH CONDUCTIVITY P-TYPE CDS [J].
CHERNOW, F ;
ELDRIDGE, G ;
RUSE, G ;
WAHLIN, L .
APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&
[8]  
CHUNG CH, 1975, ION IMPLANTATION SEM, P253
[9]   TYPE CONVERSION AND P-N JUNCTIONS IN N-CDTE PRODUCED BY ION IMPLANTATION [J].
DONNELLY, JP ;
FOYT, AG ;
HINKLEY, ED ;
LINDLEY, WT ;
DIMMOCK, JO .
APPLIED PHYSICS LETTERS, 1968, 12 (09) :303-&
[10]  
HOLTEN WC, 1965, INT S LUMINES, P454