SOLID-PHASE EPITAXIAL-GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS

被引：8
|
作者：
MAJNI, G
FERRARI, G
FERRARI, R
CANALI, C
CATELLANI, F
OTTAVIANI, G
MEA, GD
机构：
[1] IST FIS,MODENA,ITALY
[2] IST FIS,PADOVA,ITALY
来源：
THIN SOLID FILMS | 1977年 / 44卷 / 02期
关键词：
D O I：
10.1016/0040-6090(77)90454-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：193 / 199
页数：7
相关论文
共 50 条
  • [1] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH PALLADIUM SILICIDE LAYERS
    CANALI, C
    CAMPISANO, SU
    LAU, SS
    LIAU, ZL
    MAYER, JW
    JOURNAL OF APPLIED PHYSICS, 1975, 46 (07) : 2831 - 2836
  • [2] SOLID-PHASE EPITAXIAL-GROWTH OF GE LAYERS
    MARRELLO, V
    MAYER, JW
    CAYWOOD, JM
    NICOLET, MA
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 13 (02): : 531 - &
  • [3] CRYSTALLINE QUALITIES OF SILICON LAYERS FORMED BY SOLID-PHASE EPITAXIAL-GROWTH
    TSENG, WF
    LIAU, ZL
    LAU, SS
    NICOLET, MA
    MAYER, JW
    THIN SOLID FILMS, 1977, 46 (01) : 99 - 107
  • [4] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH AL FILM
    MAJNI, G
    OTTAVIANI, G
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (08) : C290 - C290
  • [5] SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHIZED INP
    RIDGWAY, MC
    PALMER, GR
    ELLIMAN, RG
    DAVIES, JA
    WILLIAMS, JS
    APPLIED PHYSICS LETTERS, 1991, 58 (05) : 487 - 489
  • [6] EPITAXIAL-GROWTH OF GAAS BY SOLID-PHASE TRANSPORT
    CHEN, JS
    KOLAWA, E
    GARLAND, CM
    NICOLET, MA
    APPLIED PHYSICS LETTERS, 1991, 59 (13) : 1597 - 1599
  • [7] SOLID-PHASE EPITAXIAL-GROWTH OF INP ON GAAS
    MARUYAMA, H
    PAK, K
    SAKAKIBARA, K
    NAKAMURA, M
    TAKANO, Y
    YONEZU, H
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 180 - 185
  • [8] DEFECT CONTROL DURING SOLID-PHASE EPITAXIAL-GROWTH OF SIGE ALLOY LAYERS
    IM, S
    WASHBURN, J
    GRONSKY, R
    CHEUNG, NW
    YU, KM
    APPLIED PHYSICS LETTERS, 1993, 63 (07) : 929 - 931
  • [9] SOLID-PHASE EPITAXIAL-GROWTH OF SI THROUGH A1 FILM
    MAJNI, G
    OTTAVIANI, G
    JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 132 - 137
  • [10] SOLID-PHASE EPITAXIAL-GROWTH OF GAAS ON SI SUBSTRATES
    CHO, KI
    CHOO, WK
    PARK, SC
    NISHINAGA, T
    LEE, BT
    APPLIED PHYSICS LETTERS, 1990, 56 (05) : 448 - 450
12345