CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES

被引：3444

作者：

NAKAMURA, S

MUKAI, T

SENOH, M

机构：

[1] Department of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 13期

关键词：

D O I：

10.1063/1.111832

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Candela-class high-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with the luminous intensity over 1 cd were fabricated. As an active layer, a Zn-doped InGaN layer was used for the DH LEDs. The typical output power was 1500 muW and the external quantum efficiency was as high as 2.7% at a forward current of 20 mA at room temperature. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 and 70 nm, respectively. This value of luminous intensity was the highest ever reported for blue LEDs.

引用

页码：1687 / 1689

页数：3

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