ALTERNATIVE ROUTE FOR STUDYING THE GRAIN-BOUNDARY SCATTERING IN SEMICONDUCTOR-FILMS OF HIGH-RESISTIVITY

被引：27
作者：
BHATTACHARYYA, D
CHAUDHURI, S
PAL, AK
机构：
[1] Department of Materials Science, Indian Association for the Cultivation of Science, Jadavpur, Calcutta
来源：
VACUUM | 1993年 / 44卷 / 08期
关键词：
D O I：
10.1016/0042-207X(93)90309-X
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
An alternative technique for studying the grain boundary scattering phenomena for highly resistive semiconducting films is presented. ft is shown that the grain boundary potential, the density of trap states and the carrier concentration of the films can be obtained by measuring reflectances of the films deposited on non-absorbing substrates.
引用
收藏
页码：797 / 801
页数：5
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