INFLUENCE OF CW LASER SCAN SPEED IN SOLID-PHASE CRYSTALLIZATION OF AMORPHOUS SI FILM ON SI3N4-GLASS SUBSTRATE

被引：38

作者：

AUVERT, G

BENSAHEL, D

GEORGES, A

NGUYEN, VT

HENOC, P

MORIN, F

COISSARD, P

机构：

[1] CNET BAGNEUX,F-92220 BAGNEUX,FRANCE

[2] CNET LANNION,F-22301 LANNION,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 08期

关键词：

D O I：

10.1063/1.92452

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：613 / 615

页数：3

共 11 条

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J].

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GOLOVCHENKO, JA ;

SMITH, PR ;

SURKO, CM ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :539-541

[2]

Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[3]

BLUM NA, 1976, J NON-CRYST SOLIDS, V22, P29, DOI 10.1016/0022-3093(76)90004-1

[4] CRYSTALLIZATION-FRONT VELOCITY DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS [J].

CHAPMAN, RL ;

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP .

APPLIED PHYSICS LETTERS, 1980, 37 (03) :292-295

[5] HEAT TREATING AND MELTING MATERIAL WITH A SCANNING LASER OR ELECTRON-BEAM [J].

CLINE, HE ;

ANTHONY, TR .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3895-3900

[6] SOLID-PHASE GROWTH OF LARGE ALIGNED GRAINS DURING SCANNED LASER CRYSTALLIZATION OF AMORPHOUS-GE FILMS ON FUSED-SILICA [J].

FAN, JCC ;

ZEIGER, HJ ;

GALE, RP ;

CHAPMAN, RL .

APPLIED PHYSICS LETTERS, 1980, 36 (02) :158-161

[7] CALCULATION OF SOLID-PHASE REACTION-RATES INDUCED BY A SCANNING CW LASER [J].

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) :1256-1258

[8]

MORIN F, 1979, APPL PHYS LETT, V35, P696

[9] TEMPERATURE DISTRIBUTIONS PRODUCED IN SEMICONDUCTORS BY A SCANNING ELLIPTICAL OR CIRCULAR CW LASER-BEAM [J].

NISSIM, YI ;

LIETOILA, A ;

GOLD, RB ;

GIBBONS, JF .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :274-279

[10] SOLID-PHASE EPITAXY OF IMPLANTED SILICON BY CW AR ION LASER IRRADIATION [J].

WILLIAMS, JS ;

BROWN, WL ;

LEAMY, HJ ;

POATE, JM ;

RODGERS, JW ;

ROUSSEAU, D ;

ROZGONYI, GA ;

SHELNUTT, JA ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1978, 33 (06) :542-544

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