PRELIMINARY RESULTS ON OXIDATION OF GAAS AND GAP DURING CHEMICAL ETCHING

被引:57
作者
SCHWARTZ, B
机构
关键词
D O I
10.1149/1.2408135
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:657 / &
相关论文
共 5 条
[1]  
COLBY JW, PRIVATE COMMUNICATIO
[2]   MECHANISM OF GALLIUM ARSENIDE DECOMPOSITION BY OXIDIZING AGENTS [J].
GERISCHER, H ;
WALLEMMA.I .
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE-FRANKFURT, 1969, 64 (1-4) :187-+
[3]  
HARTMAN R, IN PRESS
[4]  
Holmes P. J., 1962, ELECTROCHEMISTRY SEM
[5]   THE CHEMICAL POLISHING OF GALLIUM ARSENIDE IN BROMINE-METHANOL [J].
SULLIVAN, MV ;
KOLB, GA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1963, 110 (06) :585-587