LASER-INDUCED IRREVERSIBLE CHANGE OF THE CARRIER-RECOMBINATION PROCESS IN CDSXSE1-X-DOPED GLASSES

被引：63

作者：

TOMITA, M ^{[1
]}

MATSUOKA, M ^{[1
]}

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS | 1990年 / 7卷 / 07期

关键词：

D O I：

10.1364/JOSAB.7.001198

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Laser-induced irreversible changes of luminescence intensity and lifetime have been systematically investigated in CdSxSel-x-doped glass in order to clarify the laser-induced carrier-recombination process. These changes proceed at different rates, depending on the laser’s irradiation time, intensity, and sample temperature. A new phenomenological model for this laser-induced process is proposed in which a new recombination route for carriers is created in the trapping state by activation of a distributed potential barrier of this state. © 1990 Optical Society of America.

引用

页码：1198 / 1203

页数：6

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