EPITAXIAL GROWTH OF ZINC SULPHIDE ON SILICON BY VACUUM EVAPORATION

被引：24
作者：
JONES, PL
LITTING, CNW
MASON, DE
WILLIAMS, VA
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1968年 / 1卷 / 03期
关键词：
D O I：
10.1088/0022-3727/1/3/302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：283 / &
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