DIELECTRIC RELAXATIONS IN REDUCED RUTILE (TIO2-X) AT LOW TEMPERATURES

被引：74

作者：

DOMINIK, LAK

MACCRONE, RK

机构：

来源：

PHYSICAL REVIEW | 1967年 / 163卷 / 03期

关键词：

D O I：

10.1103/PhysRev.163.756

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：756 / &

共 39 条

[1] MULTIPLE-BAND CONDUCTION IN N-TYPE RUTILE (TIO2) [J].

BECKER, JH ;

HOSLER, WR .

PHYSICAL REVIEW, 1965, 137 (6A) :1872-&

[2]

BECKER JH, 1963, J PHYS SOC JAPAN S2, V18, P152

[3] ELECTRICAL PROPERTIES OF TITANIUM DIOXIDE SEMICONDUCTORS [J].

BRECKENRIDGE, RG ;

HOSLER, WR .

PHYSICAL REVIEW, 1953, 91 (04) :793-802

[4] TITANIUM DIOXIDE RECTIFIERS [J].

BRECKENRIDGE, RG ;

HOSLER, WR .

JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1952, 49 (02) :65-72

[5]

BUESSEM WR, 1959, KINETICS HIGH TEMPER, P13

[6] POINT-DEFECT RELAXATION IN RUTILE SINGLE CRYSTALS [J].

CARNAHAN, RD ;

BRITTAIN, JO .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (10) :3095-&

[7] LOW-TEMPERATURE INTERNAL FRICTION PEAK IN RUTILE [J].

CARNAHAN, RD ;

BRITTAIN, JO .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1808-&

[8] ELECTRON SPIN RESONANCE IN SEMICONDUCTING RUTILE [J].

CHESTER, PF .

JOURNAL OF APPLIED PHYSICS, 1961, 32 :2233-&

[9]

DATE M, 1960, BUSSEI TOKYO, V1, P22

[10]

FORLAND K, DA31039SC71190 CONTR

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