ELECTRON-SCATTERING IN HEAVILY DOPED COMPENSATED POLAR SEMICONDUCTORS

被引：7

作者：

CHATTOPADHYAY, D

GHOSAL, A

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.25.6538

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6538 / 6541

页数：4

共 13 条

[1]

BONCH-BRUEVICH VL, 1963, SOV PHYS-SOL STATE, V4, P1953

[2]

Brooks H., 1955, ADV ELECTRON, V7, P85

[3] ELECTRON-SCATTERING BY IONIZED IMPURITIES IN SEMICONDUCTORS [J].

CHATTOPADHYAY, D ;

QUEISSER, HJ .

REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :745-768

[4]

DRUMINSKI M, J CRYST GROWTH

[5]

MEYER JMM, UNPUB

[6] PHASE-SHIFT CALCULATION OF IONIZED IMPURITY SCATTERING IN SEMICONDUCTORS [J].

MEYER, JR ;

BARTOLI, FJ .

PHYSICAL REVIEW B, 1981, 23 (10) :5413-5427

[7]

NAG B, 1980, ELECTRON TRANSPORT C

[8] CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].

REISS, H ;

FULLER, CS ;

MORIN, FJ .

BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636

[9] SILICON-DOPED GALLIUM ARSENIDE GROWN FROM GALLIUM SOLUTION - SILICON SITE DISTRIBUTION [J].

SPITZER, WG ;

PANISHI, MB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (10) :4200-&

[10] MICROSCOPIC DIELECTRIC FUNCTION OF A MODEL SEMICONDUCTOR [J].

SRINIVASAN, G .

PHYSICAL REVIEW, 1969, 178 (03) :1244-+

← 1 2 →