LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE

被引：39

作者：

HERSEE, S

BALDY, M

ASSENAT, P

DECREMOUX, B

DUCHEMIN, JP

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 14期

关键词：

D O I：

10.1049/el:19820423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：618 / 620

页数：3

共 7 条

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DUCHEMIN, JP ;

BONNET, M ;

KOELSCH, F ;

HUYGHE, D .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (07) :1134-1149

[2] ABRUPT GA1-XALXAS-GAAS QUANTUM-WELL HETEROSTRUCTURES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

GARNER, CM ;

SU, CY ;

SPICER, WE .

APPLIED PHYSICS LETTERS, 1979, 34 (05) :335-337

[3] A NEW APPROACH TO THE GETTERING OF OXYGEN DURING THE GROWTH OF GAALAS BY LOW-PRESSURE MOCVD [J].

HERSEE, SD ;

DIFORTEPOISSON, MA ;

BALDY, M ;

DUCHEMIN, JP .

JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :53-57

[4]

HOLANYAK N, 1980, IEEE J QUANTUM ELECT, V16, P170

[5]

KRESSEL H, 1977, SEMICONDUCTOR LASERS, P270

[6] EXTREMELY LOW THRESHOLD (ALGA)AS GRADED-INDEX WAVEGUIDE SEPARATE CONFINEMENT HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :217-219

[7] A GRADED-INDEX WAVE-GUIDE SEPARATE-CONFINEMENT LASER WITH VERY LOW THRESHOLD AND A NARROW GAUSSIAN-BEAM [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (02) :134-137

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