STUDY OF FILM CRYSTALLIZATION KINETICS INITIAL-STAGE BY MONTE-CARLO SIMULATION

被引:0
作者
ALEKSANDROV, LN
BOCHKOVA, RV
KISELEV, GB
ENTIN, IA
机构
[1] Institute of Semiconductor Physics, Novosibirsk
关键词
D O I
10.1002/crat.2170290108
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Monte Carlo Simulation has been used for studying the initial stage characteristics of film crystallization during the layer-by-layer film growth by two-dimensional nucleation. It is shown that the non-monotonous changes of the growing film perimeter and mass correspond to the reflection intensity oscillation from the growth surface. The observed changes of the overgrowing part of the surface are in agreement with the probability-statistical calculations. The vizualization of surface relief changes during the growth process under different conditions has been provided.
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页码:25 / 31
页数:7
相关论文
共 9 条
[1]  
ALEKSANDROV L, 1984, THIN FILMS SCI TECHN, V5
[2]  
ALEKSANDROV LN, 1975, SOV PHYS-CRYSTALLOGR, V20, P1140
[3]  
ALEKSANDROV LN, 1991, SIMULATION SEMICONDU
[4]  
ALEKSANDROV LN, 1988, CRYST RES TECHNOL, V23, P143
[5]  
BENNEMA P, 1973, CRYSTAL GROWTH INTRO, P24
[6]   OSCILLATIONS OF SPECULAR BEAM INTENSITY IN REFLECTION DIFFRACTION FROM THE SURFACE OF A GROWING EPITAXIAL FILM - A THEORETICAL-STUDY [J].
KASHCHIEV, D ;
KANTER, YO .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 110 (01) :61-76
[7]  
SOKOLOV LV, 1986, JETP LETT, V44, P278
[8]  
TROFIMOV VI, 1982, SOV PHYS-CRYSTALLOGR, V27, P824
[9]  
WEDENSKY D, 1991, MICROELECTRONICS FEB, P15