SILICON CONTAMINATION OF POLYPROPYLENE FILMS FROM GLASS REACTORS IN A BCL3 RF COLD-PLASMA

Cold plasma chemistry can be used for surface modification and/or grafting of polymeric substrates for enhanced properties. In addition to interaction with the substrate, plasma reactions can also occur at other surfaces confined to the reactor. Contamination of polypropylene (PP) substrates with silicon, originating from the reactor walls in a BCl3 plasma, has been shown to occur based on ESCA measurements and the presence of Si-based compounds in the gaseous phase has been shown by GC-MS and high resolution MS for the plasma generated molecular mixture. The Si incorporation is similar to that found with CF4 plasmas where a shorter treatment time resulted in higher Si incorporation. These results indicate that reactor wall-origin contaminations can accompany plasma treatments, interfere with the the main reaction mechanisms and create serious problems for achieving the desired surface properties.