RBS, INFRARED AND DIFFRACTION COMPARED ANALYSIS OF SIC SYNTHESIS IN C-IMPLANTED SILICON

被引:9
作者
DURUPT, P [1 ]
CANUT, B [1 ]
GAUTHIER, JP [1 ]
ROGER, JA [1 ]
PIVOT, J [1 ]
机构
[1] UNIV CLAUDE BERNARD LYON 1,CNRS,CRISTALLOG LAB,F-69622 VILLEURBANNE,FRANCE
关键词
D O I
10.1016/0025-5408(80)90235-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:1557 / 1565
页数:9
相关论文
共 22 条
  • [1] COMPOSITE-MATERIAL FILMS - OPTICAL-PROPERTIES AND APPLICATIONS
    ABELES, B
    GITTLEMAN, JI
    [J]. APPLIED OPTICS, 1976, 15 (10): : 2328 - 2332
  • [2] STRUCTURE OF SILICON-CARBIDE SYNTHESIZED IN DIAMOND AND SILICON BY ION-IMPLANTATION
    AKIMCHENKO, IP
    KISSELEVA, KV
    KRASNOPEVTSEV, VV
    MILYUTIN, YV
    TOURYANSKY, AG
    VAVILOV, VS
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02): : 75 - 80
  • [3] SOME PROPERTIES OF VAPOR DEPOSITED SIC
    BEAN, KE
    GLEIM, PS
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1158 - &
  • [4] FORMATION OF SIC IN SILICON BY ION IMPLANTATION
    BORDERS, JA
    PICRAUX, ST
    BEEZHOLD, W
    [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &
  • [5] BRANDER RW, 1973, 3RD INT C SIL CARB, P8
  • [6] DURUPT P, 1980, 6TH EUR CRYST M BARC
  • [7] FORMATION OF SIC AND SI-3N-4 IN SILICON BY ION-IMPLANTATION
    EDELMAN, FL
    KUZNETSOV, ON
    LEZHEIKO, LV
    LUBOPYTOVA, EV
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 29 (01): : 13 - 15
  • [8] GAUTHIER JP, 1978, 41 I PHYS C LOND, P397
  • [9] Grove A S, 1967, PHYS TECHNOLOGY SEMI
  • [10] LOW-TEMPERATURE EPITAXY OF BETA-SIC BY REACTIVE DEPOSITION
    LEARN, AJ
    HAQ, KE
    [J]. APPLIED PHYSICS LETTERS, 1970, 17 (01) : 26 - &