STABLE OPERATION OF ALGAAS/GAAS LIGHT-EMITTING-DIODES FABRICATED ON SI SUBSTRATE

被引：15

作者：

WADA, N

YOSHIMI, S

SAKAI, S

SHAO, CL

FUKUI, M

机构：

[1] Department of Electrical and Electronic Engineering, Tokushima University, Tokushima, 770, Minami-josanjima

[2] Textile Engineering Institute, Van-tong

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期

关键词：

GAAS ON SI; LED; PHOTOLUMINESCENCE; LIFETIME TEST; OUTPUT POWER; STRESS; DEFECT;

D O I：

10.1143/JJAP.31.L78

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An AlGaAs/GaAs LED (light-emitting diode) with very small degradation is fabricated in an UCGAS (undercut GaAs on Si) structure for the first time. The 43 K photoluminescence data show that the stress in UCGAS annealed at 400-degrees-C is reduced to less than 1 x 10(8) dyn/cm2. The output power from the UCGAS LED under a constant current of 800 A/cm2 degrades to 94% of the original value in the first several hours and subsequently maintains constant output for more than 1000 hours. On the other hand, the output power emitted from the conventional mesa-type LED which contains residual stress of more than 10(9) dyn/cm2 degrades quickly.

引用

页码：L78 / L81

页数：4

共 8 条

[1]

HAYAFUJI N, 1988, I PHYS C SER, V96, P183

[2] INJECTION-ENHANCED DISLOCATION GLIDE UNDER UNIAXIAL STRESS IN GAAS-(GAAL)AS DOUBLE HETEROSTRUCTURE LASER [J].