SHORT-WAVELENGTH INGAALP VISIBLE LASER-DIODES

Considerable progress has been made in the development of short-wavelength InGaAlP visible-light laser diodes. This paper describes the recent results achieved on the operation of these InGaAlP lasers. It is found that there is a strong correlation between operation temperature and oscillation wavelength. The deterioration of favorable temperature characteristics in the short-wavelength region is attributed to an increase in the leakage current, which originates in a small conduction-band discontinuity inherent in the InGaAlP material system. The introduction of a highly doped p-cladding layer has a remarkable effect on the improvement of these temperature characteristics. Short-wavelength oscillation at 630 nm band wavelength was achieved for transverse-mode stabilized InGaAlP lasers.