POSSIBILITY OF A NEW PHASE-TRANSITION IN 7 X 7 STRUCTURE ON CLEAN SI(111) SURFACES

被引：16
作者：
ISHIZAKA, A
DOI, T
ICHIKAWA, M
机构：
[1] Central Research Laboratory, Kokubunji, Tokyo 185, Hitachi Ltd.
来源：
APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 09期
关键词：
D O I：
10.1063/1.104471
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Temperature dependences of reflection high-energy electron diffraction intensities are measured for Si(111)-7 x 7 clean surfaces. The temperature dependences of diffraction intensities for both 7 x 7 super spots and specular spots change above 830 K. These show the possibility of two states in the 7 x 7 structure. The high-temperature phase of the 7 x 7 structure is stable up to 1090 K, following the well known phase transition between 7 x 7 and 1 x 1 structures.
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页码：902 / 904
页数：3
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