THIN NITRIDE FILMS ON TEXTURED POLYSILICON TO INCREASE MULTIMEGABIT DRAM CELL CHARGE CAPACITY

被引：23
作者：
FAZAN, PC
LEE, RR
机构：
[1] Micron Technology, Inc., Boise
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期
关键词：
D O I：
10.1109/55.56474
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper proposes a new technique to increase the charge storage capacity of advanced multimegabit DRAM's up to 34% without changing cell area or dielectric thickness. The technique does not require an additional masking step. A polysilicon texturing process is combined with a dielectric which has bulk-limited electrical conduction. The leakage current is not affected by this process and the field acceleration coefficient is considerably increased. © 1990 IEEE
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页码：279 / 281
页数：3
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