CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON

被引：64

作者：

AUSTON, DH ^{[1
]}

GOLOVCHENKO, JA ^{[1
]}

SMITH, PR ^{[1
]}

SURKO, CM ^{[1
]}

VENKATESAN, TNC ^{[1
]}

机构：

[1] BELL TEL LABS INC,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 06期

关键词：

D O I：

10.1063/1.90429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：539 / 541

页数：3

共 11 条

[1]

Auston D. H., 1978, APPL PHYS LETT, V33

[2] CHANNELING EFFECT MEASUREMENTS OF RECRYSTALLIZATION OF AMORPHOUS SI LAYERS ON CRYSTAL SI [J].

CSEPREGI, L ;

MAYER, JW ;

SIGMON, TW .

PHYSICS LETTERS A, 1975, 54 (02) :157-158

[3] PHYSICAL AND ELECTRICAL-PROPERTIES OF LASER-ANNEALED ION-IMPLANTED SILICON [J].

GAT, A ;

GIBBONS, JF ;

MAGEE, TJ ;

PENG, J ;

DELINE, VR ;

WILLIAMS, P ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :276-278

[4]

KACHURIN GA, 1976, SOV PHYS SEMICOND+, V10, P1128

[5]

KHAIBULLIN IB, 1977, SOV PHYS SEMICOND+, V11, P190

[6]

LAX M, UNPUBLISHED

[7]

Mayer J. W., 1970, ION IMPLANTATION SEM

[8]

MULLER H, 1975, APPL PHYS LETT, V26, P293

[9] ELECTRICAL ACTIVATION OF IMPLANTED ARSENIC IN SILICON DURING LOW-TEMPERATURE ANNEAL [J].

NISHI, H ;

SAKURAI, T ;

FURUYA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :461-466

[10] VISIBLE INTERFERENCE EFFECTS IN SILICON CAUSED BY HIGH-CURRENT-HIGH-DOSE IMPLANTATION [J].

SEIDEL, TE ;

PASTEUR, GA ;

TSAI, JCC .

APPLIED PHYSICS LETTERS, 1976, 29 (10) :648-651

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