1ST CW OPERATION OF A GA0.25IN0.75AS0.5P0.5-INP LASER ON A SILICON SUBSTRATE

被引：99

作者：

RAZEGHI, M ^{[1
]}

DEFOUR, M ^{[1
]}

BLONDEAU, R ^{[1
]}

OMNES, F ^{[1
]}

MAUREL, P ^{[1
]}

ACHER, O ^{[1
]}

BRILLOUET, F ^{[1
]}

CFAN, JC ^{[1
]}

SALERNO, J ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,F-92220 BAGNEUX,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 24期

关键词：

D O I：

10.1063/1.100239

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2389 / 2390

页数：2

共 9 条

[1]

FAN JCC, 1986, HETEROEPITAXY SI, V67

[2] 1ST ROOM-TEMPERATURE CW OPERATION OF A GAINASP-INP LIGHT-EMITTING DIODE ON A SILICON SUBSTRATE [J].

RAZEGHI, M ;

BLONDEAU, R ;

DEFOUR, M ;

OMNES, F ;

MAUREL, P ;

BRILLOUET, F .

APPLIED PHYSICS LETTERS, 1988, 53 (10) :854-855

[3] HIGH-QUALITY GAINASP INP HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SILICON SUBSTRATES [J].

RAZEGHI, M ;

OMNES, F ;

DEFOUR, M ;

MAUREL, P .

APPLIED PHYSICS LETTERS, 1988, 52 (03) :209-211

[4] HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

OMNES, F ;

DEFOUR, M ;

BOOTHROYD, C ;

STOBBS, WM ;

KELLY, M .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4511-4514

[5] 1ST GAINASP-INP DOUBLE-HETEROSTRUCTURE LASER EMITTING AT 1.27 MU-M ON A SILICON SUBSTRATE [J].

RAZEGHI, M ;

DEFOUR, M ;

OMNES, F ;

MAUREL, P ;

CHAZELAS, J ;

BRILLOUET, F .

APPLIED PHYSICS LETTERS, 1988, 53 (09) :725-727

[6]

RAZEGHI M, 1988, APR MAT RES SOC REN

[7]

RAZEGHI M, 1988, 4TH P INT C MET VAP

[8]

RAZEGHI M, 1988, AUG P SOL STAT DEV M, P363

[9]

SALERNO JP, 1988, 1988 P MAT RES SOC S

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