INTERMEDIATE CRYSTALLIZATION OF AMORPHOUS LAYERS OF SILICON AT PULSED LASER ANNEALING

被引：3
作者：
BALANDIN, VY
DVURECHENSKII, AV
ALEKSANDROV, LN
机构：
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 110卷 / 01期
关键词：
D O I：
10.1002/pssa.2211100113
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：133 / 139
页数：7
相关论文
共 14 条
[1]  
ALEKSANDROV LN, 1987, AVTOMETRIYA, V1, P64
[2]  
ALEKSANDROV LN, 1985, KINETICS SEMICONDUCT, P224
[3]  
BAERI P, 1982, LASER ANNEALING SEMI, P78
[4]  
BALANDIN VY, 1986, ZH TEKH FIZ+, V56, P807
[5]  
BALANDIN VY, 1986, PHYS STATUS SOLIDI A, V93, pK105, DOI 10.1002/pssa.2210930240
[6]  
BALANDIN VY, 1986, POVERKH FIZ KHIM MEK, P53
[7]  
BALANDIN VY, 1986, 7 C GROWTH SYNTH PRO, P151
[8]  
BALANDIN VY, 1986, COMPUTER SIMULATION, P41
[9]   TRANSITIONS TO DEFECTIVE CRYSTAL AND THE AMORPHOUS STATE INDUCED IN ELEMENTAL SI BY LASER QUENCHING [J].
CULLIS, AG ;
WEBBER, HC ;
CHEW, NG ;
POATE, JM ;
BAERI, P .
PHYSICAL REVIEW LETTERS, 1982, 49 (03) :219-222
[10]  
Dvurechenskii A. V., 1982, PULSED ANNEALING SEM
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