OPTIMUM SEMICONDUCTOR FOR MICROWAVE DEVICES

被引：26

作者：

FAWCETT, W

HILSUM, C

REES, HD

机构：

[1] Royal Radar Establishment, Malvern Worcs.

来源：

ELECTRONICS LETTERS | 1969年 / 5卷 / 14期

关键词：

D O I：

10.1049/el:19690238

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The best semiconductors for microwave devices, silicon and gallium arsenide, are restricted in their performance because the electron drift velocity saturates at a fairly low value. It is proposed that InAs-InP alloys should give better performance. Detailed calculations of drift velocity are made by a Monte Carlo technique, and it is shown that some alloys should give drift velocities greater than 4 x 107cm/s. © 1969, The Institution of Electrical Engineers. All rights reserved.

引用

页码：313 / &

共 9 条

[1] MONTE CARLO CALCULATION OF VELOCITY-FIELD RELATIONSHIP FOR GALLIUM ARSENIDE [J].