PHOTORESIST DESIGN FOR SUB-MICRON OPTICAL LITHOGRAPHY - APPLICATION OF POLYPHOTOLYSIS

被引：0

作者：

TREFONAS, P

DANIELS, BK

FISCHER, RL

机构：

[1] MONSANTO CO,ST LOUIS,MO 63166

[2] ASPECT SYST CORP,ST LOUIS,MO

来源：

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PHOTORESISTS

引用

页码：131 / 137

页数：7

共 13 条

[1]

ARDEN W, 1983, SOLID STATE TECHNOL, V26, P143

[2]

BLUM L, 1987, P SPIE, V771

[3]

BRODIE I, 1982, PHYSICS MICROFABRICA, P274

[4]

BROERS AN, 1985, SOLID STATE TECHNOL, V28, P119

[5]

DANIELS BK, 1987, 171ST EL SOC M PHIL

[6] CHARACTERIZATION OF POSITIVE PHOTORESIST [J].

DILL, FH ;

HORNBERGER, WP ;

HAUGE, PS ;

SHAW, JM .

[7]

HOFER DC, 1982, P SOC PHOTO-OPT INST, V334, P196, DOI 10.1117/12.933577

[8]

KIM DJ, 1984, IEEE T ELECTRON DEV, V31, P1730

[9]

MCCULLOUGH AW, 1982, 6TH P INT C PHOT ELL

[10]

PARAMONOV AI, 1975, ZH NAUCH PRIKL FOTOG, V20, P353