ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON

被引:51
作者
HEMMENT, PLF
REESON, KJ
KILNER, JA
CHATER, RJ
MARSH, C
BOOKER, GR
CELLER, GK
STOEMENOS, J
机构
[1] UNIV LONDON IMPERIAL COLL SCI & TECHNOL,DEPT MET & MAT SCI,LONDON SW7 2AZ,ENGLAND
[2] UNIV OXFORD,DEPT MET & SCI MAT,OXFORD,ENGLAND
[3] AT&T BELL LABS,MURRAY HILL,NJ 07974
[4] ARISTOTELIAN UNIV SALONIKA,DEPT PHYS,SALONIKA,GREECE
关键词
The authors thank R P Arrowsmith and J R Davis for support in preparing samples and J E Mynard and the staffof the Accelerator Laboratory; University of Surrey; for their assistance in carrying out the implantations. This work is funded in part by the UK SERC;
D O I
10.1016/0042-207X(86)90131-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
17
引用
收藏
页码:877 / 881
页数:5
相关论文
共 17 条
[1]  
BOURRET A, 1985, DEC MAT RES SOC M BO
[2]   HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].
CELLER, GK ;
HEMMENT, PLF ;
WEST, KW ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534
[3]  
DAVIS GE, 1985, OCT IEEE SOS SOI WOR
[4]  
DAVIS JC, COMMUNICATION
[5]  
DAVIS JR, UNPUB APPL PHYS LETT
[6]   OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J].
HEMMENT, PLF ;
MAYDELLONDRUSZ, E ;
STEVENS, KG ;
KILNER, JA ;
BUTCHER, J .
VACUUM, 1984, 34 (1-2) :203-208
[7]  
HEMMENT PLF, 1985, DEC MAT RES SOC M BO
[8]   SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION [J].
KILNER, JA ;
CHATER, RJ ;
HEMMENT, PLF ;
PEART, RF ;
MAYDELLONDRUSZ, EA ;
TAYLOR, MR ;
ARROWSMITH, RP .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) :293-298
[9]  
MARGAIL J, 1985, 1985 MAT RES SOC M S, P33
[10]   HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY AND ITS APPLICATION TO A BSH-LSI [J].
NAKASHIMA, S ;
MAEDA, Y ;
AKIYA, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :126-132