ION-BEAM SYNTHESIS OF THIN BURIED LAYERS OF SIO2 IN SILICON

[1] BOURRET A, 1985, DEC MAT RES SOC M BO

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534

[3] DAVIS GE, 1985, OCT IEEE SOS SOI WOR

[4] DAVIS JC, COMMUNICATION

[5] DAVIS JR, UNPUB APPL PHYS LETT

[6] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J]. VACUUM, 1984, 34 (1-2) : 203 - 208

[7] HEMMENT PLF, 1985, DEC MAT RES SOC M BO

[8] SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 293 - 298

[9] MARGAIL J, 1985, 1985 MAT RES SOC M S, P33

[10] HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY AND ITS APPLICATION TO A BSH-LSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 126 - 132

[1] BOURRET A, 1985, DEC MAT RES SOC M BO

[2] HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 532 - 534

[3] DAVIS GE, 1985, OCT IEEE SOS SOI WOR

[4] DAVIS JC, COMMUNICATION

[5] DAVIS JR, UNPUB APPL PHYS LETT

[6] OXYGEN DISTRIBUTIONS IN SYNTHESIZED SIO2 LAYERS FORMED BY HIGH-DOSE O+ IMPLANTATION INTO SILICON [J]. VACUUM, 1984, 34 (1-2) : 203 - 208

[7] HEMMENT PLF, 1985, DEC MAT RES SOC M BO

[8] SIMS AND O-18 TRACER STUDIES OF THE REDISTRIBUTION OF OXYGEN IN BURIED SIO2 LAYERS FORMED BY HIGH-DOSE IMPLANTATION [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR) : 293 - 298

[9] MARGAIL J, 1985, 1985 MAT RES SOC M S, P33

[10] HIGH-VOLTAGE CMOS SIMOX TECHNOLOGY AND ITS APPLICATION TO A BSH-LSI [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) : 126 - 132