共 25 条
[1]
ALBUYARON A, 1984, 8TH P EUR C EL MICR, P521
[2]
INVESTIGATION OF THE OXYGEN-RELATED LATTICE-DEFECTS IN CZOCHRALSKI SILICON BY MEANS OF ELECTRON-MICROSCOPY TECHNIQUES
[J].
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH,
1984, 86 (01)
:245-261
[3]
BOURRET A, IN PRESS I PHYS C SE
[4]
BOURRET A, 1986, MATER RES SOC S P, V59, P223
[5]
HIGH-RESOLUTION STRUCTURE IMAGING AND IMAGE SIMULATION OF STACKING-FAULT TETRAHEDRA IN ION-IMPLANTED SILICON
[J].
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES,
1985, 52 (03)
:369-381
[6]
CRAVEN RA, 1981, SEMICONDUCTOR SILICO, P254
[7]
DEVEIRMAN A, IN PRESS I PHYS C SE
[8]
Gaworzewski P., 1985, 1st International Autumn School 1985: Gettering and Defect Engineering in the Semiconductor Technology (GADEST). Proceedings, P69
[9]
OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON
[J].
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING,
1982, 28 (02)
:79-92
[10]
HU SM, 1986, MATER RES SOC S P, V59, P249