ELECTRIC-FIELD ENHANCED EMISSION FROM NON-COULOMBIC TRAPS IN SEMICONDUCTORS

被引：198

作者：

MARTIN, PA ^{[1
]}

STREETMAN, BG ^{[1
]}

HESS, K ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 12期

关键词：

D O I：

10.1063/1.328731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7409 / 7415

页数：7

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