TRANSIENT ANNEALING OF SELENIUM-IMPLANTED GALLIUM-ARSENIDE USING A GRAPHITE STRIP HEATER

被引：31

作者：

CHAPMAN, RL

FAN, JCC

DONNELLY, JP

TSAUR, BY

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.93266

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：805 / 807

页数：3

共 17 条

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[3]

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APPLIED PHYSICS LETTERS, 1978, 32 (03) :149-151

[8] DOUBLE-LAYERED ENCAPSULANT FOR ANNEALING ION-IMPLANTED GAAS UP TO 1100DEGREESC [J].

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[9] SOLID SOLUBILITY OF SELENIUM IN GAAS AS MEASURED BY SECONDARY ION MASS-SPECTROMETRY [J].

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[10]

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