HETEROEPITAXIAL GROWTH OF CEO2(001) FILMS ON SI(001) SUBSTRATES BY PULSED LASER DEPOSITION IN ULTRAHIGH-VACUUM

被引：66

作者：

NAGATA, H

TSUKAHARA, T

GONDA, S

YOSHIMOTO, M

KOINUMA, H

机构：

[1] The Research Laboratory of Engineering Materials, Tokyo Institute of Technology, Yokohama-shi Kanagawa, 227, Nagatsuta-cho 4259, Midori-ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 6B期

关键词：

LASER MBE; CEO2; SRTIO3; SI; EPITAXIAL FILM; LATTICE ENGINEERING;

D O I：

10.1143/JJAP.30.L1136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pulsed laser deposition in ultrahigh vacuum (UHV) was applied to the epitaxial growth of CeO2 film on Si(001). Although the direct deposition of CeO2(001) on Si(001) was unsuccessful, the desired epitaxy was achieved by inserting the growth of a SrTiO3 layer. The formation of a CeO2(001) parallel-to SrTiO3(001) parallel-to Si(001) layered structure was verified by reflection high-energy electron diffraction analysis of the growing surface at a temperature between 650 and 700-degrees-C in UHV. In addition to lattice matching, chemical interaction at the growing surface had a decisive effect on the epitaxy and orientation of growing ceramic lattices.

引用

页码：L1136 / L1138

页数：3

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