SCHOTTKY GATE FET ON SILICON-ON-SAPPHIRE

被引：0
|
作者：
KAPLAN, SH [1 ]
LEGAT, WH [1 ]
THUN, RE [1 ]
机构：
[1] RAYTHEON CO,DIV MISSILE SYST,BEDFORD,MA 01730
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C144 / C144
页数：1
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