MOSSBAUER STUDIES OF IMPLANTED I-129 IONS IN SEMICONDUCTORS AND ALKALI-HALIDES

被引：30

作者：

HAFEMEISTER, DW ^{[1
]}

WAARD, HD ^{[1
]}

机构：

[1] UNIV GRONINGEN, NATUURKUNDIG LAB, GRONINGEN, NETHERLANDS

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.7.3014

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3014 / 3027

页数：14

共 30 条

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[3]

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[4]

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[6]

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[8]

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[9] IMPLANTATION AND ANNEALING BEHAVIOR OF GROUP 3 AND V DOPANTS IN SILICON AS STUDIED BY CHANNELING TECHNIQUE [J].

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JOHANSSON, NG ;

MAYER, JW .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (02) :842-+

[10] CALCULATION AND INTERPRETATION OF 129I ISOMER SHIFTS IN ALKALI IODIDE LATTICES [J].

FLYGARE, WH ;

HAFEMEISTER, DW .

JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (03) :789-+

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