TECHNIQUE FOR DIRECTLY PLOTTING DOPING PROFILE OF SEMICONDUCTOR WAFERS (8-SHAPED WAY)

被引：3
作者：
NAKHMANSON, RS [1 ]
机构：
[1] ACAD SCI USSR,SEMICOND PHYS INST,NOVOSIBIRSK 630090,USSR
来源：
SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 01期
关键词：
D O I：
10.1016/0038-1101(76)90138-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：87 / 91
页数：5
相关论文
共 14 条
[1]   INSTRUMENT FOR RAPID DETERMINATION OF SEMICONDUCTOR IMPURITY PROFILES [J].
BAXANDALL, PJ ;
COLLIVER, DJ ;
FRAY, AF .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1971, 4 (03) :213-+
[2]   AN AUTOMATIC TEST SET FOR MEASURING DOPING PROFILE OF SEMICONDUCTOR EPITAXIAL LAYERS [J].
CALIFANO, FP ;
LUCIANO, A .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1970, 41 (06) :865-&
[3]   DIODE EDGE EFFECT ON DOPING-PROFILE MEASUREMENTS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1970, ED17 (05) :404-&
[4]   A TECHNIQUE FOR DIRECTLY PLOTTING INVERSE DOPING PROFILE OF SEMICONDUCTOR WAFERS [J].
COPELAND, JA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) :445-&
[5]   METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].
GOODMAN, AM .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&
[6]   MEASUREMENT OF SEMICONDUCTOR CARRIER CONCENTRATION PROFILES [J].
HUGHES, FD ;
WILSON, M ;
HEADON, RF .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1972, 5 (03) :241-&
[7]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
OBRIEN, RR .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (02) :212-&
[8]   ON MEASUREMENT OF IMPURITY ATOM DISTRIBUTIONS IN SILICON BY DIFFERENTIAL CAPACITANCE TECHNIQUE [J].
KENNEDY, DP ;
MURLEY, PC ;
KLEINFELDER, W .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1968, 12 (05) :399-+
[9]  
LANDBROOKE PH, 1971, INT J ELECTRONICS, V31, P149
[10]   INVESTIGATIONS OF MIS STRUCTURE INHOMOGENEITIES USING A SCANNING MERCURY PROBE [J].
NAKHMANS.RS ;
DOBROVOL.PP .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 19 (01) :225-241
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