60-GHZ PSEUDOMORPHIC AL025GA075AS/IN028GA072AS LOW-NOISE HEMTS

被引：43

作者：

TAN, KL

DIA, RM

STREIT, DC

SHAW, LK

HAN, AC

SHOLLEY, MD

LIU, PH

TRINH, TQ

LIN, T

YEN, HC

机构：

[1] TRW Electronics and Technology Division, Redondo Beach, CA

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 01期

关键词：

D O I：

10.1109/55.75686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have successfully fabricated state-of-the-art V-band low-noise planar-doped pseudomorphic (PM) InGaAs high electron mobility transistors (HEMT's) with an indium mole fraction of 28% in the InGaAs channel. A device with a 0.15-mu-m T-gate achieved a minimum noise figure of 1.5 dB with an associated gain of 6.1 dB at 61.5 GHz.

引用

页码：23 / 25

页数：3

共 7 条

[1] AUST A, 1989, P GAAS IC S, P95
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[6] INFLUENCE OF QUANTUM-WELL WIDTH ON DEVICE PERFORMANCE OF AL0.30GA0.70AS IN0.25GA0.75AS (ON GAAS) MODFETS
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[7] ULTRALOW-NOISE W-BAND PSEUDOMORPHIC INGAAS HEMTS
TAN, KL
DIA, RM
STREIT, DC
HAN, AC
TRINH, TQ
VELEBIR, JR
LIU, PH
LIN, TS
YEN, HC
SHOLLEY, M
SHAW, L
[J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (07) : 303 - 305

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