ALLOY-DISORDER-INDUCED INTRASUBBAND SCATTERING IN A QUANTUM-WELL UNDER AN ELECTRIC-FIELD

被引：18

作者：

BASU, PK ^{[1
]}

RAYCHAUDHURY, D ^{[1
]}

机构：

[1] UNIV CALCUTTA,DEPT ELECTR SCI,CALCUTTA 700009,W BENGAL,INDIA

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 07期

关键词：

D O I：

10.1063/1.346353

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The scattering rates in the lowest subband in a quantum well are calculated for alloy-disorder scattering when an electric field is applied perpendicular to the layer plane. Calculations for the InGaAs quantum well indicate that the scattering rate increases with increase in the electric field.

引用

页码：3443 / 3444

页数：2

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