MODELING OF HYDROGEN DIFFUSION IN N-TYPE AND P-TYPE SILICON

被引：99
作者：
MATHIOT, D
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 40卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.40.5867
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：5867 / 5870
页数：4
相关论文
共 12 条
[1]  
BORENSTEIN JT, 1988, IN PRESS CHARACERIZA, V138
[2]   HYDROGEN IN CRYSTALLINE SILICON - A DEEP DONOR [J].
CAPIZZI, M ;
MITTIGA, A .
APPLIED PHYSICS LETTERS, 1987, 50 (14) :918-920
[3]   STATE AND MOTION OF HYDROGEN IN CRYSTALLINE SILICON [J].
DEAK, P ;
SNYDER, LC ;
CORBETT, JW .
PHYSICAL REVIEW B, 1988, 37 (12) :6887-6892
[4]  
DEICHER M, 1989, MATER SCI FORUM, V3841, P1045
[5]   INTERSTITIAL HYDROGEN AND NEUTRALIZATION OF SHALLOW-DONOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].
JOHNSON, NM ;
HERRING, C ;
CHADI, DJ .
PHYSICAL REVIEW LETTERS, 1986, 56 (07) :769-772
[6]  
JOHNSON NM, 1987, PHYS REV B, V35, P4166, DOI 10.1103/PhysRevB.35.4166
[7]   ABSENCE OF OXYGEN DIFFUSION DURING HYDROGEN PASSIVATION OF SHALLOW-ACCEPTOR IMPURITIES IN SINGLE-CRYSTAL SILICON [J].
JOHNSON, NM ;
MOYER, MD .
APPLIED PHYSICS LETTERS, 1985, 46 (08) :787-789
[8]  
JOHNSON NM, 1989, MATERIALS SCI FORUM, V3841, P961
[9]  
Pantelides S. T., 1986, Materials Science Forum, V10-12, P573, DOI 10.4028/www.scientific.net/MSF.10-12.573
[10]   HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].
PEARTON, SJ ;
CORBETT, JW ;
SHI, TS .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195
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