ELECTRON-TUNNELING IN SINGLE-BARRIER AND DOUBLE-BARRIER STRUCTURES

被引：9

作者：

CHOI, KK

NEWMAN, PG

FOLKES, PA

IAFRATE, GJ

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.40.8006

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8006 / 8009

页数：4

共 10 条

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[3] PERIODIC NEGATIVE CONDUCTANCE BY SEQUENTIAL RESONANT TUNNELING THROUGH AN EXPANDING HIGH-FIELD SUPERLATTICE DOMAIN [J].

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[6] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES [J].

HEIBLUM, M ;

FISCHETTI, MV ;

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OSTERLING, L .

PHYSICAL REVIEW LETTERS, 1987, 58 (08) :816-819

[7] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIER - A HOT-ELECTRON GAAS DEVICE WITH CURRENT GAIN [J].

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NATHAN, MI .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1105-1107

[8] EFFECT OF INELASTIC-SCATTERING ON RESONANT AND SEQUENTIAL TUNNELING IN DOUBLE BARRIER HETEROSTRUCTURES [J].

JONSON, M ;

GRINCWAJG, A .

APPLIED PHYSICS LETTERS, 1987, 51 (21) :1729-1731

[9] ELECTRON-TRANSPORT DYNAMICS IN QUANTIZED INTRINSIC GAAS [J].

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SPAH, RJ ;

ENGLISH, JH .

PHYSICAL REVIEW B, 1987, 36 (17) :9402-9405

[10] TUNNELING IN A FINITE SUPERLATTICE [J].

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1973, 22 (11) :562-564

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