ROLE OF HYDROGEN IN DOPING MECHANISM FOR A-SI-H ALLOYS

被引：2

作者：

ZHANG, RQ ^{[1
]}

DAI, GC ^{[1
]}

CAI, ZT ^{[1
]}

GUAN, DR ^{[1
]}

机构：

[1] SHANDONG UNIV,INST THEORET CHEM,JINAN,PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 65卷 / 12期

关键词：

D O I：

10.1016/0038-1098(88)90666-7

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1625 / 1627

页数：3

共 9 条

[1] DENSITY OF STATES IN GAP OF TETRAHEDRALLY BONDED AMORPHOUS-SEMICONDUCTORS [J].

ADLER, D .

PHYSICAL REVIEW LETTERS, 1978, 41 (25) :1755-1758

[2] THEORETICAL STUDIES OF ELECTRONIC STATES PRODUCED BY HYDROGENATION OF AMORPHOUS SILICON [J].

CHING, WY ;

LAM, DJ ;

LIN, CC .

PHYSICAL REVIEW LETTERS, 1979, 42 (12) :805-808

[3]

DAI GC, 1985, J NON-CRYST SOLIDS, V77-8, P103, DOI 10.1016/0022-3093(85)90621-0

[4]

Pople J, 1970, APPROXIMATE MOL ORBI

[5] LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN DOPED AND COMPENSATED AMORPHOUS HYDROGENATED SILICON [J].

REIMER, JA ;

DUNCAN, TM .

PHYSICAL REVIEW B, 1983, 27 (08) :4895-4901

[6] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J].

SPEAR, WE ;

LECOMBER, PG .

SOLID STATE COMMUNICATIONS, 1975, 17 (09) :1193-1196

[7] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE [J].

SPEAR, WE ;

LECOMBER, PG .

PHILOSOPHICAL MAGAZINE, 1976, 33 (06) :935-949

[8] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON [J].

STREET, RA .

PHYSICAL REVIEW LETTERS, 1982, 49 (16) :1187-1190

[9] LOCALIZED STATES IN DOPED AMORPHOUS-SILICON [J].

STREET, RA .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 :1-16

← 1 →