EFFECTS OF DEEP CENTERS ON N-TYPE GAP SCHOTTKY BARRIERS

被引：19

作者：

WRONSKI, CR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1970年 / 41卷 / 09期

关键词：

D O I：

10.1063/1.1659511

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3805 / &

共 19 条

[1] SURFACE STATES AND BARRIER HEIGHT OF METAL-SEMICONDUCTOR SYSTEMS [J].

COWLEY, AM ;

SZE, SM .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (10) :3212-&

[2] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J].

COWLEY, AM .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) :3024-&

[3] INFRARED DONOR-ACCEPTOR PAIR SPECTRA INVOLVING DEEP OXYGEN DONOR IN GALLIUM PHOSPHIDE [J].

DEAN, PJ ;

HENRY, CH ;

FROSCH, CJ .

PHYSICAL REVIEW, 1968, 168 (03) :812-&

[4] THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].

DEWALD, JF .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639

[5] METAL-SEMICONDUCTOR BARRIER HEIGHT MEASUREMENT BY DIFFERENTIAL CAPACITANCE METHOD - 1 CARRIER SYSTEM [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :329-&

[6] SURFACE-BARRIER DIODES ON SILICON CARBIDE [J].

HAGEN, SH .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1458-&

[7] DC CHARACTERISTICS OF SILICON AND GERMANIUM POINT CONTACT CRYSTAL RECTIFIERS .2. THE MULTICONTACT THEORY [J].

JOHNSON, VA ;

SMITH, RN ;

YEARIAN, HJ .

JOURNAL OF APPLIED PHYSICS, 1950, 21 (04) :283-289

[8] METAL-SEMICONDUCTOR SURFACE BARRIERS [J].

MEAD, CA .

SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1023-&

[9] PROPERTIES OF GAP SCHOTTKY BARRIER DIODES AT ELEVATED TEMPERATURES [J].

NANNICHI, Y ;

PEARSON, GL .

SOLID-STATE ELECTRONICS, 1969, 12 (05) :341-&

[10]

Rose A, 1963, CONCEPTS PHOTOCONDUC

← 1 2 →