STRAIN IN ULTRATHIN EPITAXIAL-FILMS OF GE/SI(100) MEASURED BY ION-SCATTERING AND CHANNELING

被引：52

作者：

FELDMAN, LC

BEVK, J

DAVIDSON, BA

GOSSMANN, HJ

MANNAERTS, JP

机构：

来源：

PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.59.664

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：664 / 667

页数：4

共 7 条

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[3]

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