HIGH-MOBILITY P-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR ON STRAINED SI

被引：11
作者：
NAYAK, DK
WOO, JCS
PARK, JS
WANG, KL
MACWILLIAMS, KP
机构：
[1] UNIV CALIF LOS ANGELES,DEPT ELECT ENGN,LOS ANGELES,CA 90024
[2] AEROSP CORP,EL SEGUNDO,CA 90009
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4B期
关键词：
STRAINED SI; MOSFET; SIGE BUFFER; HOLE-MOBILITY;
D O I：
10.1143/JJAP.33.2412
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An enhancement-mode high-mobility p-channel metal-oxide-semiconductor field-effect-transistor (MOSFET) is fabricated on strained Si layer for the first time. A biaxially strained thin Si layer is pseudomorphically grown on a relaxed GeSi buffer on Si substrate by molecular beam epitaxy (MBE). MOSFETs are fabricated using conventional Si process technology. It is found that low-field channel mobility of PMOSFET on strained Si is 50% higher than that of PMOSFET on bulk Si.
引用
收藏
页码：2412 / 2414
页数：3
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